Method and apparatus for forming an integrated circuit electrode having a reduced contact area

ABSTRACT

A method and an apparatus for manufacturing a memory cell having a non-volatile resistive memory element with a limited size active area. The method comprises a first step of providing a dielectric volume and forming a plug opening within the dielectric volume. A recessed plug of a conductive material is then formed within a lower portion of the opening and a dielectric spacer is formed along the sidewalls of an upper portion of the opening. The spacer is cylindrical and has a central hole. A contact plug is subsequently formed within the central hole, the contact plug electrically coupled to the recessed plug. The contact plug can include a memory element or an additional memory element can be applied over the contact plug.

BACKGROUND OF THE INVENTION

The present invention relates generally to the use of electrodes insemiconductor devices, and more particularly relates to the formation ofsmall electrodes having reduced contact areas which may be utilized, forexample, in semiconductor memory devices. More specifically, the presentinvention relates to the manufacture of a small-sized electrode such asis useful to control the size of the active area of a chalcogenideresistive element in a memory cell of a chalcogenide memory device.

Electrodes are used in a variety of integrated circuit devices. Incertain devices, such as memory devices, the ability to efficientlymanufacture small electrodes is crucial in maximizing the performanceand cost-efficiency of the device. A memory device can have a pluralityof memory arrays, and each memory array can include hundreds ofthousands of memory cells. Each memory cell generally includes a memoryelement and an access device (such as, for example, a diode) coupled tothe memory element. Memory-storage materials, that is, materials thatcan be made to store information, such as by storing a charge or bychanging resistivity, are used to fabricate the memory elements.Electrodes couple each memory element to a corresponding access device.The electrodes can be part of the access device and can also define thememory element.

In certain memory devices, such as memory devices having chalcogenidememory elements, the size of the electrode has a direct relationship tothe speed, power requirements, and capacity of the memory device.Chalcogenides are materials which may be electrically stimulated tochange states, from an amorphous state to a crystalline state, forexample, or to exhibit different resistivities while in the crystallinestate. Thus, chalcogenide memory elements can be utilized in memorydevices for the storage of binary data, or of data represented inhigher-based systems. Such memory cells will typically include a cellaccessible, for example, by a potential applied to access lines, in amanner conventionally utilized in memory devices. Typically, the cellwill include the chalcogenide element as a resistive element, and willinclude an access or isolation device coupled to the chalcogenideelement. In one exemplary implementation suitable for use in a RAM, theaccess device may be a diode.

Many chalcogenide alloys may be contemplated for use with the presentinvention. For example, alloys of tellurium, antimony and germanium maybe particularly desirable, and alloys having from approximately to 55-85percent tellurium and on the order of 15-25 percent germanium arecontemplated for use in accordance with the present invention.Preferably, the chalcogenide element will be generally homogeneous(although gradiented alloys may be utilized), and will be alloys formedfrom tellurium, selenium, germanium, antimony, bismuth, lead, strontium,arsenic, sulfur, silicon, phosphorus, oxygen and mixtures or alloys ofsuch elements. The alloys will be selected so as to establish a materialcapable of assuming multiple, generally stable, states in response to astimulus. It is contemplated that in most cases, the stimulus willrepresent an electrical signal, and that the multiple states will bestates of differing electrical resistance. U.S. Pat. No. 5,335,219 isbelieved to be generally illustrative of the existing state of the artrelative to chalcogenide materials, and is believed to provideexplanations regarding the current theory of function and operation ofchalcogenide elements and their use in memory cells. The specificationof U.S. Pat. No. 5,335,219 to Ovshinski et al., issued Aug. 2, 1994, isincorporated herein by reference, for all purposes. An exemplaryspecific chalcogenide alloy suitable for use in the present invention isone consisting of Te₅₆ Ge₂₂ Sb₂₂.

An observed property of a chalcogenide element in a memory cell is thatthe chalcogenide element will have an “active area” which may be lessthan the area of the entire chalcogenide element. The size of thisactive area can be controlled by controlling the size of the electrodecontact with the chalcogenide element. A primary reason for limiting theactive area of the chalcogenide element is that the size of the activearea is directly related to the programming current and/or time requiredto achieve the desired state change. Thus, in the interest of optimallyfast programming rates of a memory device, it is desirable to minimizethe dimension of electrode contacting the chalcogenide element, tominimize the active area and to thereby facilitate optimally fastprogramming time and optimally low programming current.

Techniques for forming the electrode of a chalcogenide memory cellinclude forming a hole in a dielectric layer, and then depositing aconductive material in the hole. Conventional techniques of forming thehole and the insulative layer have included the application of a highcurrent pulse to open a hole having a diameter of on the order of0.1-0.2 microns. Additional attempts have been made to rely uponphotolithography or etching to establish an opening through theinsulative layer. All of these methods suffer from technologicalconstraints upon the hole size, and offer less than optimalrepeatability.

Accordingly, the present invention provides a new method and apparatusfor creating small electrodes, so as, for example, to establishminimally-sized active areas in a chalcogenide layer disposed adjacentto such insulative layer. In a preferred implementation of theinvention, the active area of the chalcogenide element can be generallycontrolled through selection of the electrode size in the insulativelayer.

SUMMARY OF THE INVENTION

The present invention comprises an electrode suitable for use in amulti-state memory cell for use in a memory array of a memory device.The electrode includes a base portion and an upper portion. The baseportion includes a recessed plug of conductive material configured forelectrically coupling to an access device or to an access line. Theupper portion includes a cylindrically shaped spacer of an insulativematerial, the spacer having a center hole, and a contact plug ofconductive material, the contact plug placed inside the center hole. Thecontact plug electrically couples to the base portion and is configuredfor coupling to a multi-state element.

The electrode can be manufactured by first providing a dielectric volumeand then etching an opening within the dielectric volume. The recessedplug of conductive material is then formed within a lower portion of theopening, preferably by chemical vapor deposition (CVD). The spacer isformed, generally by deposition and anisotropic etching, along thesidewalls of an upper portion of the opening. Finally the contact plugis formed within the central hole, preferably by CVD.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top plan view of a memory device including a plurality ofmemory arrays.

FIG. 2 is a top plan view of a portion of one of the memory arrays ofFIG. 1, including a memory cell manufactured in accordance with thepresent invention.

FIG. 3 is an elevation view of a cross-sectional cut along line 3-3 ofthe memory cell shown in FIG. 2, the memory cell having an electrodemanufactured in accordance with the present invention

FIG. 4 is an elevation view of a cross-sectional cut of the electrode ofFIG. 3 at an initial stage during the manufacturing process.

FIG. 5 is an elevation view of a cross-sectional cut of the electrode ofFIG. 3 at an intermediate stage during the manufacturing process.

FIG. 6 is an elevation view of a cross-sectional cut of the electrode ofFIG. 3 at a later intermediate stage during the manufacturing process.

FIG. 7 is an elevation view of a cross-sectional cut of the completedelectrode of FIG. 3.

FIG. 8 is an elevation view of a cross-sectional cut of an alternativememory cell manufactured in accordance with the present invention.

DESCRIPTION OF PREFERRED EMBODIMENTS

Memory devices are integrated circuit (IC) devices that include built-inmemory storage. A memory device 10 including a plurality of memoryarrays 12 is illustrated in FIG. 1. As better seen in FIG. 2, eachmemory array 12 (also called a memory core) includes a plurality ofmemory cells 14 arranged to share connections in generally perpendicularrows (word lines) and columns (bit lines). Each memory cell 14 can beaccessed for reading or writing by a corresponding access or isolationdevice, generally placed within a base layer (not shown), by selectingthe corresponding row and column coordinates.

FIG. 3 illustrates a memory cell 14 of the memory array 12 of the memorydevice 10. Memory cell 14 includes a memory element 20, a conductivelayer 30, and an electrode 40. The electrode 40 is placed within adielectric volume 50, which in turn is placed over a conductive plate60. In other embodiments, the conductive plate 60 can be replaced by anactive device, such as an access diode or a portion thereof. A layer 22of a selected memory-storage material is placed over the electrode 40.The area of the memory-storage material layer 22 proximally in contactwith the electrode 40 becomes an active area, the non-volatile resistivememory element 20. The conductive layer 30 covers the memory-storagematerial layer 22.

In a preferred embodiment the memory-storage material layer 22 and thememory element 20 include multi-state materials, such as chalcogenide.

Suitable materials for the conductive layer 30 include tungsten,titanium nitride, carbon, and molybdenum. The conductive layer 30 caninclude a diffusion barrier and/or one or more conductive layers. Thedielectric volume 50 includes boron and phosphorus doped siliconedioxide glass (BPSG) or an inter-layer dielectric (ILD) such as plasmaenhanced chemical vapor deposited silicon dioxide. The conductive plate60 can include, for example, polysilicon, single crystal silicon, and/ormetal.

The electrode 40 rests within an opening 52 in the dielectric volume 50.The electrode 40 includes a base portion 42, located at a lower cavityportion 53 of opening 52 and in direct contact with the conductive plate60, a cylindrically shaped spacer 44, located along the sidewalls of anupper cavity portion 54 of opening 52, and a contact portion 46, placedinside of a central hole 55 in the spacer 44. The opening 52 preferablyhas a depth-to-width ratio of at least 2:1.

In a preferred embodiment, both the base portion 42 and the contactportion 46 comprise tungsten or other materials that can be depositedusing chemical vapor deposition (CVD). The spacer 44 may be formed, forexample, of silicon dioxide or silicon nitride. The depth-to-width ratioof both the opening 52 and the contact electrode 46 is at least 2:1, andis preferably between 3:1 to 5:1. In one exemplary embodiment, theopening 52 has a depth of 1.2 to 1.5 micrometers and a width/diameter of0.4 to 0.5 micrometer. The contact portion has a depth of 0.3 micrometerand a width/diameter of 0.1 micrometers or less.

The electrode 40 of FIG. 3 is manufactured by a novel “plug-in-plug”process that allows the contact portion 46 of the electrode 40 to bemuch smaller than previous electrodes. To manufacture electrode 40, aplug opening 52 is first etched into the dielectric volume 50. Theopening 52 is then filled with a plug 43 of a chemical vapor depositedconductive material. Any excess material above a top surface 56 ofdielectric volume 50 is removed by a dry chemical etch, a mechanicalplanarization, a chemical-mechanical planarization (CMP), or othercomparable methods selected in reference to the particular materialsutilized to form electrode 40. FIG. 4 depicts the electrode 40 at themanufacturing stage after the plug 43 has been placed in opening 52 andplanarized. The plug 43 is flush with top surface 56.

Next, the plug 43 is recessed below the top surface 56 to form the baseportion 42 and to leave free the upper cavity portion 54 of opening 52.This can be accomplished by over-etching during the excess-materialremoval dry chemical etch, or by another, subsequent etch process. Thespacer 44 can then be created by depositing and anisotropically etchingan insulator/dielectric layer 43. This insulator/dielectric layer couldbe, for example, silicon oxide, silicon nitride or undoped silicon.

FIG. 5 illustrates the step of manufacture of the electrode 40 after theinsulator layer 43 has been deposited, but before it has been etched.The spacer 44 does not completely fill the upper cavity portion 54,leaving the central hole (or pore) 55 all the way down to the baseportion 42. The spacer 44 may have a flare 48 as a result of practicallimitations upon by the deposition and etching process. As will beappreciated by those skilled in the art, the dimensions of spacer 44will be determined substantially by the thickness ofinsulator/dielectric layer 43 deposition and by the degree of anisotropyachieved in the etch process.

The contact electrode portion 46 is created by depositing a layer 45over the dielectric volume and filling the central hole 55. This layerwill typically be formed such as by using CVD or sputtering. In aparticularly preferred implementation, layer 45 will be a memory-storagematerial, such as a chalcogenide. In such an implementation, the contactportion 46 can act as the memory element without the need for anadditional layer of memory-storage material. Alternatively, layer 45 maysimply be a conductive material, such as tungsten, carbon, etc., formingelectrode 46.

Excess material forming layer 45 (i.e., that material above the topsurface 56) is removed using a dry chemical etch, a mechanicalplanarization, a chemical-mechanical planarization (CMP), or othermethods that accomplish similar results. FIG. 7 illustrates the finishedelectrode 40, the same as the one depicted in memory cell 14 of FIG. 3,after planarization. The contact portion 46 is significantly reduced insize from that of the original plug 43 shown in FIG. 4. As depicted inFIG. 8, another layer 62 may be formed above a plurality of electrodes46. Where electrode 46 is formed of a chalcogenide element, layer 62 maybe an electrode assembly (which may include a diffusion barrier layer toprotect the chalcogenide). Alternatively, where electrode 46 is merely aconductive plug, layer 62 may be a chalcogenide layer accessible byelectrode 46.

To further reduce the diameter of the contact electrode 46, theplanarization can be done to a point below top surface 56 (either byremoving a top portion of fill material 45 or by removing both a topportion of fill material 45 and of the dielectric volume 50) so as toremove the flare 48 of spacer 44, so as to establish minimum hole/poresize. The contact portion 46 is electrically coupled to the conductiveplate 60 by the base portion 42.

Accordingly, it should be readily understood that the embodimentdescribed and illustrated herein are illustrative only, and are not beconsidered as limitations upon the scope of the present invention. Othervariations and modifications may be made in accordance with the spiritand scope of the present invention.

1-16. (cancelled)
 17. A memory device having at least one memory cell,the memory cell having a storage element comprising: a substrate havinga first surface and having an opening therein extending from the firstsurface of the substrate to a bottom surface of the opening; aconductive material disposed within the opening, the conductive materialhaving a first portion extending from the first surface of the substrateto the bottom surface of the opening and a second portion extendinggenerally along the bottom surface of the opening, wherein a lateraldimension of the first portion of the conductive material is less than alateral dimension of the second portion of the conductive material; anda memory element electrically coupled to the first portion of theconductive material.
 18. The memory device, as set forth in claim 17,comprising an access device electrically coupled to the second portionof the conductive material.
 19. The memory device, as set forth in claim18, wherein the access device comprises a diode.
 20. The memory device,as set forth in claim 17, wherein the substrate comprises one type ofdielectric material disposed laterally about the first portion of theconductive material and another type of dielectric material disposedlaterally about the second portion of the conductive material.
 21. Thememory device, as set forth in claim 20, wherein the one type ofdielectric material comprises silicon dioxide, silicon nitride, orundoped silicon.
 22. The memory device, as set forth in claim 20,wherein the another type of dielectric material comprises BPSG orsilicon dioxide.
 23. The memory device, as set forth in claim 17,wherein the conductive material comprises a material that can bedeposited within the opening using chemical vapor deposition.
 24. Thememory device, as set forth in claim 17, wherein the memory elementcomprises a chalcogenide material.
 25. The memory device, as set forthin claim 24, wherein the chalcogenide material comprises an alloy of:tellurium, selenium, germanium, antimony, bismuth, lead, strontium,arsenic, sulfur, silicon, phosphorus, or oxygen.
 26. The memory device,as set forth in claim 17, wherein the lateral dimension of the secondportion of the conductive material is at least twice the lateraldimension of the first portion of the conductive material.
 27. A memorydevice having at least one memory cell, the memory cell having a storageelement comprising: a dielectric substrate having a first surface andhaving an opening therein extending from the first surface of thesubstrate to a bottom surface of the opening; a conductive materialdisposed within the opening, the conductive material having a firstportion extending from the first surface of the dielectric substrate tothe bottom surface of the opening and a second portion extendinggenerally along the bottom surface of the opening, wherein a lateraldimension of the first portion of the conductive material is less than50 percent of a lateral dimension of the second portion of theconductive material; and a memory element electrically coupled to thefirst portion of the conductive material.
 28. The memory device, as setforth in claim 27, comprising an access device electrically coupled tothe second portion of the conductive material.
 29. The memory device, asset forth in claim 28, wherein the access device comprises a diode. 30.The memory device, as set forth in claim 27, wherein the dielectricsubstrate comprises one type of dielectric material disposed laterallyabout the first portion of the conductive material and another type ofdielectric material disposed laterally about the second portion of theconductive material.
 31. The memory device, as set forth in claim 30,wherein the one type of dielectric material comprises silicon dioxide,silicon nitride, or undoped silicon.
 32. The memory device, as set forthin claim 30, wherein the another type of dielectric material comprisesBPSG or silicon dioxide.
 33. The memory device, as set forth in claim27, wherein the conductive material comprises a material that can bedeposited within the opening using chemical vapor deposition.
 34. Thememory device, as set forth in claim 27, wherein the memory elementcomprises a chalcogenide material.
 35. The memory device, as set forthin claim 34, wherein the chalcogenide material comprises an alloy of:tellurium, selenium, germanium, antimony, bismuth, lead, strontium,arsenic, sulfur, silicon, phosphorus, or oxygen.
 36. A memory devicehaving at least one memory cell, the memory cell having a storageelement comprising: a dielectric substrate having a conductive materialdisposed therein, the dielectric substrate having a surface, theconductive materail having a first portion extending from the surfaceinto the dielectric substrate in a direction substantially perpendicularto the surface, and the conductive material having a second portiondisposed within the dielectric substrate and extending in a directionsubstantially parallel to the surface; and a memory element electricallycoupled to the first portion of the conductive material.
 37. The memorydevice, as set forth in claim 36, comprising an access deviceelectrically coupled to the second portion of the conductive material.38. The memory device, as set forth in claim 37, wherein the accessdevice comprises a diode.
 39. The memory device, as set forth in claim36, wherein the dielectric substrate comprises one type of dielectricmaterial disposed laterally about the first portion of the conductivematerial and another type of dielectric material disposed laterallyabout the second portion of the conductive material.
 40. The memorydevice, as set forth in claim 39, wherein the one type of dielectricmaterial comprises silicon dioxide, silicon nitride, or undoped silicon.41. The memory device, as set forth in claim 39, wherein the anothertype of dielectric material comprises BPSG or silicon dioxide.
 42. Thememory device, as set forth in claim 36, wherein the conductive materialcomprises a material that can be deposited using chemical vapordeposition.
 43. The memory device, as set forth in claim 36, wherein thememory element comprises a chalcogenide material.
 44. The memory device,as set forth in claim 43, wherein the chalcogenide material comprises analloy of: tellurium, selenium, germanium, antimony, bismuth, lead,strontium, arsenic, sulfur, silicon, phosphorus, or oxygen.
 45. Thememory device, as set forth in claim 36, wherein the second portion ofthe conductive material is at least twice as wide as the first portionof the conductive material.
 46. A memory device having at least onememory cell, the memory cell having a storage element comprising: adielectric substrate having a conductive material disposed therein, thedielectric substrate having a surface, the conductive material having afirst part extending from the surface into the dielectric substrate in adirection substantially perpendicular to the surface, and the conductivematerial having a second part disposed within the dielectric substrateand extending in a direction substantially parallel to the surface,wherein the dielectric substrate comprises a first type of dielectricmaterial disposed laterally about the first part of the conductivematerial and a different type of dielectric material disposed laterallyabout the second part of the conductive material; and a memory elementelectrically coupled to the first part of the conductive material. 47.The memory device, as set forth in claim 46, comprising an access deviceelectrically coupled to the second part of the conductive material. 48.The memory device, as set forth in claim 47, wherein the access devicecomprises a diode.
 49. The memory device, as set forth in claim 46,wherein the first type of dielectric material comprises silicon dioxide,silicon nitride, or undoped silicon.
 50. The memory device, as set forthin claim 46, wherein the different type of dielectric material comprisesBPSG or silicon dioxide.
 51. The memory device, as set forth in claim46, wherein the conductive material comprises a material that can bedeposited using chemical vapor deposition.
 52. The memory device, as setforth in claim 46, wherein the memory element comprises a chalcogenidematerial.
 53. The memory device, as set forth in claim 52, wherein thechalcogenide material comprises an alloy of: tellurium, selenium,germanium, antimony, bismuth, lead, strontium, arsenic, sulfur, silicon,phosphorus, or oxygen.
 54. The memory device, as set forth in claim 46,wherein the second part of the conductive material is at least twice aswide as the first part of the conductive material.
 55. A memory devicehaving at least one memory cell, the memory cell having a storageelement comprising: a dielectric substrate having a conductive materialdisposed therein, the dielectric substrate having a surface, theconductive material having a first part extending from the surface intothe dielectric substrate in a direction substantially perpendicular tothe surface, and the conductive material having a second part disposedwithin the dielectric substrate and extending in a directionsubstantially parallel to the surface, wherein the dielectric substratecomprises a first type of dielectric material disposed about at least aportion of the first part of the conductive material and a differenttype of dielectric material disposed about the remainder the conductivematerial; and a memory element electrically coupled to the first part ofthe conductive material.
 56. The memory device, as set forth in claim55, comprising an access device electrically coupled to the second partof the conductive material.
 57. The memory device, as set forth in claim56, wherein the access device comprises a diode.
 58. The memory device,as set forth in claim 55, wherein the first type of dielectric materialcomprises silicon dioxide, silicon nitride, or undoped silicon.
 59. Thememory device, as set forth in claim 55, wherein the different type ofdielectric material comprises BPSG or silicon dioxide.
 60. The memorydevice, as set forth in claim 55, wherein the conductive materialcomprises a material that can be deposited using chemical vapordeposition.
 61. The memory device, as set forth in claim 55, wherein thememory element comprises a chalcogenide material.
 62. The memory device,as set forth in claim 61, wherein the chalcogenide material comprises analloy of: tellurium, selenium, germanium, antimony, bismuth, lead,strontium, arsenic, sulfur, silicon, phosphorus, or oxygen.
 63. Thememory device, as set forth in claim 55, wherein the second part of theconductive material is at least twice as wide as the first part of theconductive material.